EFFECTS OF P-DOPING AND NONRADIATIVE PROCESSES ON THE CURRENT-VOLTAGECHARACTERISTICS OF LONG-WAVELENGTH QUANTUM-WELL LASER-DIODES

Authors
Citation
Pk. Lau et T. Makino, EFFECTS OF P-DOPING AND NONRADIATIVE PROCESSES ON THE CURRENT-VOLTAGECHARACTERISTICS OF LONG-WAVELENGTH QUANTUM-WELL LASER-DIODES, Journal of applied physics, 84(8), 1998, pp. 4087-4090
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
0021-8979
Volume
84
Issue
8
Year of publication
1998
Pages
4087 - 4090
Database
ISI
SICI code
0021-8979(1998)84:8<4087:EOPANP>2.0.ZU;2-L
Abstract
This article presents a model that combines a pair of simplified Fermi functions and an electrical derivative technique to study the effects of the following on the ideality factor of lattice-matched long wavel ength InGaAsP/InP quantum-well laser diodes: the p-doping concentratio n level, the nonradiative recombination process (n(0.52)) within the a ctive region, the Auger recombination process, and the drift carriers leakage process. The model showed that the ideality factor increases w ith the p-doping level. It also showed that the traditional three term s recombination model was inadequate for predicting the change in idea lity factor with respect to variation in doping level. (C) 1998 Americ an Institute of Physics. [S0021-8979(98)07020-0].