MAXIMUM OPERATING TEMPERATURE OF THE 1.3 MU-M STRAINED-LAYER MULTIPLE-QUANTUM-WELL INGAASP LASERS

Citation
S. Smetona et al., MAXIMUM OPERATING TEMPERATURE OF THE 1.3 MU-M STRAINED-LAYER MULTIPLE-QUANTUM-WELL INGAASP LASERS, Journal of applied physics, 84(8), 1998, pp. 4076-4078
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
0021-8979
Volume
84
Issue
8
Year of publication
1998
Pages
4076 - 4078
Database
ISI
SICI code
0021-8979(1998)84:8<4076:MOTOT1>2.0.ZU;2-0
Abstract
We report on an experimental verification of a phenomenological model describing high-power and high-temperature operation of a compressivel y strained, InGaAsP multiple quantum well ridge-waveguide laser. The m odel, based on an assumption that mainly crystal heating defines optic al output power saturation, has been proved to adequately describe the experimental results on maximum operating temperature of the lasers. (C) 1998 American Institute of Physics. [S0021-8979(98)01920-3].