A 6H-SiC Au-gate metal-semiconductor field-effect transistor (MESFET)
was fabricated by reactive ion etching (RIE) for device isolation and
ion implantation for the n(-) contact regions of the source and drain.
The device exhibited a pinch-off voltage of -9 V, transconductance (g
(m)) of 5.3 mS/mm, and gate breakdown voltage of -200 V. The character
istics of the MESFET were investigated at high temperatures. This MESF
ET can be operated at 400 degrees C.