FABRICATION PROCEDURES AND CHARACTERISTICS OF 6H-SIC AU-GATE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR FOR USE AT HIGH-TEMPERATURES

Citation
T. Toda et al., FABRICATION PROCEDURES AND CHARACTERISTICS OF 6H-SIC AU-GATE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR FOR USE AT HIGH-TEMPERATURES, JPN J A P 1, 37(4A), 1998, pp. 1817-1818
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
Volume
37
Issue
4A
Year of publication
1998
Pages
1817 - 1818
Database
ISI
SICI code
0021-4922(1998)37:4A<1817:FPACO6>2.0.ZU;2-F
Abstract
A 6H-SiC Au-gate metal-semiconductor field-effect transistor (MESFET) was fabricated by reactive ion etching (RIE) for device isolation and ion implantation for the n(-) contact regions of the source and drain. The device exhibited a pinch-off voltage of -9 V, transconductance (g (m)) of 5.3 mS/mm, and gate breakdown voltage of -200 V. The character istics of the MESFET were investigated at high temperatures. This MESF ET can be operated at 400 degrees C.