GROWTH OF LUMINESCENT GAASP ON SI SUBSTRATE BY METALORGANIC MOLECULAR-BEAM EPITAXY USING GAP BUFFER LAYER

Citation
M. Yoshimoto et al., GROWTH OF LUMINESCENT GAASP ON SI SUBSTRATE BY METALORGANIC MOLECULAR-BEAM EPITAXY USING GAP BUFFER LAYER, JPN J A P 1, 37(4A), 1998, pp. 1709-1714
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
Volume
37
Issue
4A
Year of publication
1998
Pages
1709 - 1714
Database
ISI
SICI code
0021-4922(1998)37:4A<1709:GOLGOS>2.0.ZU;2-4
Abstract
GaAs1-xPx (0.2 < x < 0.7) was grown on a Si substrate with a GaP buffe r layer by metalorganic molecular beam epitaxy. The surface smoothness was taken to be an indicator for the improvement of GaAsP crystallini ty. The optimal growth temperature and thickness of the buffer layer f or obtaining a smooth surface were determined based on results of atom ic force microscopy and reflection high-energy electron diffraction. W hile GaAsP epilayers grown directly on Si showed no photoluminescence (PL). GaAsP grown on Si with a thin GaP buffer layer (similar to 100 A ngstrom) at 300 degrees C showed PL. GaAsP epilayers of n-type were ob tained with Sn-doping during growth. The electron conduction in n-type GaAsP xas explained by carrier conduction in both the Gamma valley an d the X valley.