LOW-TEMPERATURE POLYSILICON THIN-FILM TRANSISTORS FABRICATED FROM LASER-PROCESSED SPUTTERED-SILICON FILMS

Citation
Gk. Giust et al., LOW-TEMPERATURE POLYSILICON THIN-FILM TRANSISTORS FABRICATED FROM LASER-PROCESSED SPUTTERED-SILICON FILMS, IEEE electron device letters, 19(9), 1998, pp. 343-344
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
0741-3106
Volume
19
Issue
9
Year of publication
1998
Pages
343 - 344
Database
ISI
SICI code
0741-3106(1998)19:9<343:LPTTFF>2.0.ZU;2-J
Abstract
In an effort to develop a simple low-temperature high-performance poly silicon thin-him transistor (TFT) technology, we report a fabrication process featuring laser-crystallized sputtered-silicon films. This top Al-gate coplanar TFT process subjects the substrate to a maximum temp erature of 300 degrees C, and produces devices with mobilities up to 4 50 cm(2)/Vs, on/off current ratios greater than 10(7), without using a post-hydrogenation step. We believe these results represent the highe st performance TFT's to date fabricated from sputtered silicon films.