In an effort to develop a simple low-temperature high-performance poly
silicon thin-him transistor (TFT) technology, we report a fabrication
process featuring laser-crystallized sputtered-silicon films. This top
Al-gate coplanar TFT process subjects the substrate to a maximum temp
erature of 300 degrees C, and produces devices with mobilities up to 4
50 cm(2)/Vs, on/off current ratios greater than 10(7), without using a
post-hydrogenation step. We believe these results represent the highe
st performance TFT's to date fabricated from sputtered silicon films.