A COMBINED MONTE-CARLO AND EXPERIMENTAL-ANALYSIS OF LIGHT-EMISSION PHENOMENA IN ALGAAS GAAS HBTS/

Citation
A. Dicarlo et al., A COMBINED MONTE-CARLO AND EXPERIMENTAL-ANALYSIS OF LIGHT-EMISSION PHENOMENA IN ALGAAS GAAS HBTS/, Semiconductor science and technology, 13(8), 1998, pp. 858-863
Citations number
23
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
0268-1242
Volume
13
Issue
8
Year of publication
1998
Pages
858 - 863
Database
ISI
SICI code
0268-1242(1998)13:8<858:ACMAEO>2.0.ZU;2-G
Abstract
We present a detailed investigation of light emission phenomena connec ted with the presence of hot carriers in AlGaAs/GaAs heterojunction bi polar transistors. Electrons heated by the strong electric field at th e base-collector junction lead to both impact ionization and light emi ssion. A new general-purpose weighted Monte Carlo procedure has been d eveloped to study such effects. The measured hot electroluminescence i s attributed to radiative recombinations within the valence and the co nduction bands. Good agreement is found between theory and experiment.