0.1 MU-M-GATE INGAP INGAAS HEMT TECHNOLOGY FOR MILLIMETER-WAVE APPLICATIONS/

Citation
N. Harada et al., 0.1 MU-M-GATE INGAP INGAAS HEMT TECHNOLOGY FOR MILLIMETER-WAVE APPLICATIONS/, IEICE transactions on electronics, E81C(6), 1998, pp. 876-881
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
0916-8524
Volume
E81C
Issue
6
Year of publication
1998
Pages
876 - 881
Database
ISI
SICI code
0916-8524(1998)E81C:6<876:0MIIHT>2.0.ZU;2-F
Abstract
This paper describes our new technology for creating a highly producti ve 0.1 mu m gate InGaP/InGaAs HEMT with a GaAs substrate for a millime ter-wave MMIC. We applied a phase-shifting photo lithographic techniqu e and sidewall deposition/etching process to fabricate a 0.1 mu m gate electrode. The fabricated HEMTs showed excellent high-frequency perfo rmance: An MSG exceeding 10 dB at 60 GHz. We also fabricated a 60 GHz band, four-stage low-noise amplifier MMIC and demonstrated its superio r performance (Gain = 27 dB and NF = 3.1 dB @61 GHz). These results st rongly suggest that our InGaP/InGaAs HEMTs technologies are highly app licable for millimeter-wave applications.