SPACEBORNE 1.6-MU-M HG1-XCDXTE PHOTOVOLTA IC DETECTOR OPERATING AT AMBIENT-TEMPERATURE

Citation
Q. Wang et al., SPACEBORNE 1.6-MU-M HG1-XCDXTE PHOTOVOLTA IC DETECTOR OPERATING AT AMBIENT-TEMPERATURE, JOURNAL OF INFRARED AND MILLIMETER WAVES, 17(2), 1998, pp. 81-86
Citations number
6
Language
CHINESE
art.tipo
Article
Categorie Soggetti
Optics
ISSN journal
1001-9014
Volume
17
Issue
2
Year of publication
1998
Pages
81 - 86
Database
ISI
SICI code
1001-9014(1998)17:2<81:S1HPID>2.0.ZU;2-G
Abstract
Some n(+)-on-p photovoltaic detectors of Hg1-xCdxTe semiconductor mate rial were fabricated with B+ implantation to create n(+)-type region. The implanted diodes with an area of 400 mu m X 400 mu m and a cutoff wavelength of around 1.7 mu m operated at ambient temperature (300k), The specific detectivities of these detectors are above 3.0 X 10(11) c mHz(1/2)W(-1) in the range 1.58 similar to 1.64 mu m with a quantum ef ficiency as high as 70%. The dark current of the photodiodes is mainly limited by diffusion mechanism outside the depletion region and gener ation-recombination within it. Furthermore, after a series oi experime nts, the detectors were proved to get along well with the space-borne application.