Q. Wang et al., SPACEBORNE 1.6-MU-M HG1-XCDXTE PHOTOVOLTA IC DETECTOR OPERATING AT AMBIENT-TEMPERATURE, JOURNAL OF INFRARED AND MILLIMETER WAVES, 17(2), 1998, pp. 81-86
Some n(+)-on-p photovoltaic detectors of Hg1-xCdxTe semiconductor mate
rial were fabricated with B+ implantation to create n(+)-type region.
The implanted diodes with an area of 400 mu m X 400 mu m and a cutoff
wavelength of around 1.7 mu m operated at ambient temperature (300k),
The specific detectivities of these detectors are above 3.0 X 10(11) c
mHz(1/2)W(-1) in the range 1.58 similar to 1.64 mu m with a quantum ef
ficiency as high as 70%. The dark current of the photodiodes is mainly
limited by diffusion mechanism outside the depletion region and gener
ation-recombination within it. Furthermore, after a series oi experime
nts, the detectors were proved to get along well with the space-borne
application.