Thermoelectric transport properties of n-doped and p-doped Bi0.91Sb0.09 alloy thin films

Citation
S. Cho et al., Thermoelectric transport properties of n-doped and p-doped Bi0.91Sb0.09 alloy thin films, J APPL PHYS, 85(7), 1999, pp. 3655-3660
Citations number
28
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
85
Issue
7
Year of publication
1999
Pages
3655 - 3660
Database
ISI
SICI code
0021-8979(19990401)85:7<3655:TTPONA>2.0.ZU;2-X
Abstract
In order to understand the doping behavior of extremely narrow band gap mat erials and to optimize their characteristics for use in a thermoelectric mo dule, we performed n- and p- type doping experiments on semiconducting Bi0. 91Sb0.09 alloy thin films using the group VI(IV) element Te(Sn) as donor (a cceptor). Thermoelectric power (TEP), electrical resistivity, and Hall effe ct were studied in the range of temperatures 5-300 K. Increased Sn doping c auses the TEP to change sign (from negative to positive) and the maximum in the TEP can be controlled with the dopant concentration. Increased Te dopi ng causes the TEP to decrease. The maximum Te- oped electron concentration was about 5x10(20) cm(-3) and the highest Sn-doped hole concentration was a bout 1x10(21) cm(-3). Highly Sn- and Te-doped samples show degenerate behav ior in the electrical resistivity, TEP and Hall measurements. (C) 1999 Amer ican Institute of Physics. [S0021-8979(99)02707-3].