UNIFORMITY OF DEEP LEVELS IN SEMIINSULATING INP OBTAINED BY MULTIPLE-STEP WAFER ANNEALING

Citation
K. Kuriyama et al., UNIFORMITY OF DEEP LEVELS IN SEMIINSULATING INP OBTAINED BY MULTIPLE-STEP WAFER ANNEALING, Journal of electronic materials, 27(5), 1998, pp. 462-465
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
ISSN journal
0361-5235
Volume
27
Issue
5
Year of publication
1998
Pages
462 - 465
Database
ISI
SICI code
0361-5235(1998)27:5<462:UODLIS>2.0.ZU;2-3
Abstract
The uniformity of deep levels in semi-insulating InP wafers, which hav e been obtained by multiple-step wafer annealing under phosphorus vapo r pressure, was studied using the thermally stimulated current (TSC) a nd photoluminescence (PL) methods. Only three traps related to Fe, T-0 (ionization energy E-i = 0.19 eV), T-1 (0.25 eV), and T-2 (0.33 eV), probably forming complex defects, were observed in the wafer and they exhibited a relatively uniform distribution. PL spectra relating to ph osphorus vacancies observed in some regions of the wafer are correlate d with a small TSC signal having an ionization energy of 0.43 eV.