K. Kuriyama et al., UNIFORMITY OF DEEP LEVELS IN SEMIINSULATING INP OBTAINED BY MULTIPLE-STEP WAFER ANNEALING, Journal of electronic materials, 27(5), 1998, pp. 462-465
The uniformity of deep levels in semi-insulating InP wafers, which hav
e been obtained by multiple-step wafer annealing under phosphorus vapo
r pressure, was studied using the thermally stimulated current (TSC) a
nd photoluminescence (PL) methods. Only three traps related to Fe, T-0
(ionization energy E-i = 0.19 eV), T-1 (0.25 eV), and T-2 (0.33 eV),
probably forming complex defects, were observed in the wafer and they
exhibited a relatively uniform distribution. PL spectra relating to ph
osphorus vacancies observed in some regions of the wafer are correlate
d with a small TSC signal having an ionization energy of 0.43 eV.