RECURRENT LOCAL RESISTANCE BREAKDOWN OF EPITAXIAL BATIO3 HETEROSTRUCTURES

Citation
Y. Watanabe et al., RECURRENT LOCAL RESISTANCE BREAKDOWN OF EPITAXIAL BATIO3 HETEROSTRUCTURES, Applied physics letters, 72(19), 1998, pp. 2415-2417
Citations number
19
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
Journal title
Volume
72
Issue
19
Year of publication
1998
Pages
2415 - 2417
Database
ISI
SICI code
Abstract
Leakage current through epitaxial BaTiO3 films was investigated to cla rify the difference between the characteristics of nanometer and milli meter-size metal contacts. SrTiO3:Nb bottom electrode revealed genuine properties of a single metal/BaTiO3 contact and demonstrated that bre akdown voltage and leakage current density at both nanometer and milli meter-size contacts were controlled by the Schottky barrier. However, in marked contrast with millimeter-size contacts, nanometer-size conta cts conducted little current below breakdown voltage and repeatedly ex hibited abrupt breakdowns having a giant current density >10 A mm(-2). The breakdown field was as high as 0.45 MV cm(-1) at the forward bias , while no breakdown occurred up to 0.5 MV cm(-1) at the reverse bias. (C) 1998 American Institute of Physics. [S0003-6951(98)00719-0].