MAGNETOTRANSPORT PROPERTIES OF A SINGLE-CRYSTALLINE BETA-FESI2 LAYER GROWN ON SI(001) SUBSTRATE BY REACTIVE DEPOSITION EPITAXY

Citation
T. Suemasu et al., MAGNETOTRANSPORT PROPERTIES OF A SINGLE-CRYSTALLINE BETA-FESI2 LAYER GROWN ON SI(001) SUBSTRATE BY REACTIVE DEPOSITION EPITAXY, JPN J A P 2, 37(3B), 1998, pp. 333-335
Citations number
23
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
Volume
37
Issue
3B
Year of publication
1998
Pages
333 - 335
Database
ISI
SICI code
0021-4922(1998)37:3B<333:MPOASB>2.0.ZU;2-Y
Abstract
We report on the magnetotransport properties of a single-crystalline s emiconducting beta-FeSi2 layer for the first time. A single-crystallin e 5000-Angstrom-thick beta-FeSi2 layer was prepared on Si(001) by a tw o-step reactive deposition epitaxy (RDE). Magnetotransport measurement s showed the occurrence of anomalous Hall effect and negative magnetor esistance in the beta-FeSi2 layer below 77 K. The Arrott plot indicate d the possibility that the single-crystalline beta-FeSi2 exhibits ferr omagnetic behavior below 15 K.