CRACKING PHENOMENA OF BRITTLE FILMS IN NANOSTRUCTURE COMPOSITES ANALYZED BY A MODIFIED SHEAR LAG MODEL WITH RESIDUAL STRAIN

Citation
M. Yanaka et al., CRACKING PHENOMENA OF BRITTLE FILMS IN NANOSTRUCTURE COMPOSITES ANALYZED BY A MODIFIED SHEAR LAG MODEL WITH RESIDUAL STRAIN, Journal of Materials Science, 33(8), 1998, pp. 2111-2119
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science
ISSN journal
0022-2461
Volume
33
Issue
8
Year of publication
1998
Pages
2111 - 2119
Database
ISI
SICI code
0022-2461(1998)33:8<2111:CPOBFI>2.0.ZU;2-L
Abstract
This paper proposes a modification to the shear lag model for multiple cracking of thin films in order to take into account the residual str ain, and uses it to estimate the critical fracture strength of SiOx fi lms with thicknesses from 75 to 660 nm deposited on 12 thick polyethyl ene terephthalate (PET) substrates. It was found that: (1) The differe nce of residual strains in the film and substrate increased as the thi ckness of the film decreased. (2) In both initial and multiple formati on of cracks, SiOx films failed at almost constant values of a critica l stress ranging from 200 to 300 MPa when the thickness was larger tha n 200 nm, whereas below that it failed at higher values. (C) 1998 Chap man & Hall.