MOLECULAR-DYNAMICS STUDY OF TRANSIENT-DIFFUSION MECHANISMS IN LOW-TEMPERATURE EPITAXIAL-GROWTH

Authors
Citation
Y. Yue et al., MOLECULAR-DYNAMICS STUDY OF TRANSIENT-DIFFUSION MECHANISMS IN LOW-TEMPERATURE EPITAXIAL-GROWTH, Physical review. B, Condensed matter, 57(11), 1998, pp. 6685-6688
Citations number
25
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
0163-1829
Volume
57
Issue
11
Year of publication
1998
Pages
6685 - 6688
Database
ISI
SICI code
0163-1829(1998)57:11<6685:MSOTMI>2.0.ZU;2-U
Abstract
This paper investigates the transient-diffusion process in low-tempera ture epitaxial growth of thin-film Cu on the Cu(100) surface with mole cular-dynamics simulations. By using a hybrid tight-binding-like poten tial, we have classified and made a quantitative comparison for the va rious transient-diffusion motions occurring during deposition. The sta tistics indicate that the impact cascade-diffusion mechanism plays a n oticeable role in promoting atomic mobility. And the observed diffract ion-intensity oscillations show that a quasi-layer-by layer growth in the initial stage may take place for temperatures as low as 100 K.