PHASE-TRANSITION OF PSEUDOBINARY CR-AL-N FILMS DEPOSITED BY MAGNETRONSPUTTERING METHOD

Citation
A. Sugishima et al., PHASE-TRANSITION OF PSEUDOBINARY CR-AL-N FILMS DEPOSITED BY MAGNETRONSPUTTERING METHOD, Surface & coatings technology, 97(1-3), 1997, pp. 590-594
Citations number
13
Language
INGLESE
art.tipo
Article
ISSN journal
0257-8972
Volume
97
Issue
1-3
Year of publication
1997
Pages
590 - 594
Database
ISI
SICI code
0257-8972(1997)97:1-3<590:POPCFD>2.0.ZU;2-A
Abstract
Phase transition of pseudobinary Cr1-xAlxN was investigated by synthes izing Cr-Al-N films using a reactive magnetron sputtering method. It w as found that the crystal structure of the pseudobinary Cr-Al-N films changes from B1 (NaCl) type to B4 (wurtzite) type at the AlN content b etween 67 mol% and 75 mol%. The critical composition for the transitio n from B1 to B4 shows good agreement with the composition (77 mol% AlN ) predicted by the two band parameters. The crytallinities of the Cr-A l-N films with B1 type structure became higher with increasing content of CrN and the lowest crystallinity was observed in the B4 type Cr-Al -N films with the AlN content around 75 mol%, which is very close to t he critical composition for B1/B4 phase transition. (C) 1997 Elsevier Science S.A.