Dielectric polarization noise in silicon p-n junctions was measured at
low leakage current, less than 1 x 10(-17) A, and at temperatures bet
ween 110 and 200 K. The power spectra of the noise voltages exhibit 1/
f characteristics, where f is the frequency. The dielectric loss of th
e p-n junctions, which was derived from the 1/f noise by using the flu
ctuation-dissipation theorem, is proportional to the temperature, and
is almost independent of the characteristics of the p-n junctions. (C)
1997 American Institute of Physics.