1 F DIELECTRIC POLARIZATION NOISE IN SILICON P-N-JUNCTIONS/

Authors
AKIBA M
Citation
M. Akiba, 1 F DIELECTRIC POLARIZATION NOISE IN SILICON P-N-JUNCTIONS/, Applied physics letters, 71(22), 1997, pp. 3236-3238
Citations number
8
Language
INGLESE
art.tipo
Article
Journal title
Applied physics letters → ACNP
ISSN journal
0003-6951
Volume
71
Issue
22
Year of publication
1997
Pages
3236 - 3238
Database
ISI
SICI code
0003-6951(1997)71:22<3236:1FDPNI>2.0.ZU;2-J
Abstract
Dielectric polarization noise in silicon p-n junctions was measured at low leakage current, less than 1 x 10(-17) A, and at temperatures bet ween 110 and 200 K. The power spectra of the noise voltages exhibit 1/ f characteristics, where f is the frequency. The dielectric loss of th e p-n junctions, which was derived from the 1/f noise by using the flu ctuation-dissipation theorem, is proportional to the temperature, and is almost independent of the characteristics of the p-n junctions. (C) 1997 American Institute of Physics.