Infrared photoluminescence from Ge+-implanted SiO2 film

Citation
T. Gao et al., Infrared photoluminescence from Ge+-implanted SiO2 film, PHYS LETT A, 253(3-4), 1999, pp. 234-238
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
PHYSICS LETTERS A
ISSN journal
0375-9601 → ACNP
Volume
253
Issue
3-4
Year of publication
1999
Pages
234 - 238
Database
ISI
SICI code
0375-9601(19990322)253:3-4<234:IPFGSF>2.0.ZU;2-E
Abstract
Ge ions were implanted into SiO2 films thermally grown on crystalline Si at an energy of 60 KeV and with a dose of 1 x 10(16) cm(-2), followed by anne aling at different temperatures, Under an excitation of the 514.5 nm line o f an Ar+ laser, the implanted films exhibit a broad infrared photoluminesce nce (PL) at room temperature. The PL peak displays a redshift with increasi ng annealing temperature. The experimental results from Raman scattering, R utherford backscattering and X-ray photoelectron spectroscopy were utilized to analysis the structure of the films, The PL mechanism is discussed in t he light of the results of structural analyses. (C) 1999 Published by Elsev ier Science B.V.