Ge ions were implanted into SiO2 films thermally grown on crystalline Si at
an energy of 60 KeV and with a dose of 1 x 10(16) cm(-2), followed by anne
aling at different temperatures, Under an excitation of the 514.5 nm line o
f an Ar+ laser, the implanted films exhibit a broad infrared photoluminesce
nce (PL) at room temperature. The PL peak displays a redshift with increasi
ng annealing temperature. The experimental results from Raman scattering, R
utherford backscattering and X-ray photoelectron spectroscopy were utilized
to analysis the structure of the films, The PL mechanism is discussed in t
he light of the results of structural analyses. (C) 1999 Published by Elsev
ier Science B.V.