Test results of heavily irradiated Si detectors

Citation
S. Albergo et al., Test results of heavily irradiated Si detectors, NUCL INST A, 422(1-3), 1999, pp. 238-241
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
0168-9002 → ACNP
Volume
422
Issue
1-3
Year of publication
1999
Pages
238 - 241
Database
ISI
SICI code
0168-9002(19990211)422:1-3<238:TROHIS>2.0.ZU;2-M
Abstract
A large use of silicon microstrip detectors is foreseen for the intermediat e part of the CMS tracker. A specific research and development program has been carried out with the aim of finding design layouts and technological s olutions for allowing silicon microstrip detectors to be reliably used on a high radiation level environment. As a result of this work single sided, A C-coupled, polysilicon biased, 300 mu m thick, p(+) on n substrate detector s were chosen. Irradiation tests have been performed on prototypes up to fl uence 2 x 10(14) n/cm(2). The detector performances do not significantly ch ange if the detectors are biased well above the depletion voltage. S/N is r educed by less than 20%, still enough to insure a good efficiency and space resolution. Multiguard structures has been developed in order to reach hig h voltage operation (above 500 V). (C) 1999 Published by Elsevier Science B .V. All rights reserved.