A low noise, low power consumption BiCMOS preamplifier-shaper for microstri
p detector readout in the future LE-IC experiments has been designed and fa
bricated using the radiation hard SOI BiCMOS-PJFET process of DMILL. In the
present prototype, an ENC noise of 571 electrons at 0pF with a noise slope
of 37 electrons/pF has been obtained for a shaping time of 25 ns, a gain o
f 30 mV/MIP and a power consumption of 1 mW per channel. Measurements after
irradiations by gamma photons and neutrons are also presented in this pape
r. (C) 1999 Elsevier Science B.V. All rights reserved.