Effects of rapid thermal annealing on the structural and optical properties of InAs/GaAs self-assembled quantum dots

Citation
S. Cho et al., Effects of rapid thermal annealing on the structural and optical properties of InAs/GaAs self-assembled quantum dots, JPN J A P 1, 37(12B), 1998, pp. 7165-7168
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
37
Issue
12B
Year of publication
1998
Pages
7165 - 7168
Database
ISI
SICI code
0021-4922(199812)37:12B<7165:EORTAO>2.0.ZU;2-K
Abstract
We present the effects of rapid thermal annealing on the structural and opt ical properties of InAs/GaAs self-assembled quantum dot structures grown by molecular beam epitaxy. Annealing at higher temperature results in an incr ease in island size, a corresponding decrease in the density of islands, an d a redshift in the luminescence emission from the islands. The temperature dependence of the photoluminescence peak energy of the quantum dots for th e unannealed and annealed samples is well described by the Varshni equation . The different values of thermal quenching activation energies for the una nnealed and annealed samples indicate a variation of the quantum dot confin ing potential.