Contactless electronic transport analysis of microcrystalline silicon

Citation
R. Brenot et al., Contactless electronic transport analysis of microcrystalline silicon, THIN SOL FI, 337(1-2), 1999, pp. 63-66
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
0040-6090 → ACNP
Volume
337
Issue
1-2
Year of publication
1999
Pages
63 - 66
Database
ISI
SICI code
0040-6090(19990111)337:1-2<63:CETAOM>2.0.ZU;2-9
Abstract
Electronic transport of microcrystalline silicon is analyzed by diffusion-i nduced time resolved microwave conductivity (DTRMC), a new contactless meth od based on time resolved microwave conductivity (TRMC) and related to the carrier diffusion in the analyzed sample. This method, associated with TRMC and with Hall measurement, is used to investigate the transport in microcr ystalline silicon. The techniques are used to compare the mean longitudinal , the mean transversal and the local transport. Comparison of various sampl es illustrates the influence of film structure on the electronic transport. (C) 1999 Elsevier Science S.A. All rights reserved.