Electronic transport of microcrystalline silicon is analyzed by diffusion-i
nduced time resolved microwave conductivity (DTRMC), a new contactless meth
od based on time resolved microwave conductivity (TRMC) and related to the
carrier diffusion in the analyzed sample. This method, associated with TRMC
and with Hall measurement, is used to investigate the transport in microcr
ystalline silicon. The techniques are used to compare the mean longitudinal
, the mean transversal and the local transport. Comparison of various sampl
es illustrates the influence of film structure on the electronic transport.
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