Deposition of microcrystalline silicon in an integrated distributed electron cyclotron resonance PECVD reactor

Citation
P. Bulkin et al., Deposition of microcrystalline silicon in an integrated distributed electron cyclotron resonance PECVD reactor, THIN SOL FI, 337(1-2), 1999, pp. 37-40
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
0040-6090 → ACNP
Volume
337
Issue
1-2
Year of publication
1999
Pages
37 - 40
Database
ISI
SICI code
0040-6090(19990111)337:1-2<37:DOMSIA>2.0.ZU;2-F
Abstract
The deposition of mu c-Si in a low pressure high density plasma reactor is studied. Films were deposited either from pure silane or from the mixture o f SiH4 and H-2 onto glass substrates and deposition kinetics followed with kinetic phase modulated ellipsometry Growth rates of up to 0.8 nm/s were ac hieved with good quality material. Crystalline fraction shows a strong depe ndence on process pressure and exceeds 80% for samples grown at optimal con ditions. It is found that hydrogen dilution is not needed for integrated di stributed electron cyclotron resonance (IDECR) discharge to produce crystal lized material. The grain size measured with X-ray diffraction was found to be between 10 and 15 nm and of single (1 1 1) orientation. Both ellipsomet ric data and Raman analysis show a strong dependence of crystallinity or hy drogen residence time in the reactor. (C) 1999 Elsevier Science S.A. All ri ghts reserved.