On the origin of strong visible photoluminescence in a Ge/porous Si structure

Citation
Xl. Wu et al., On the origin of strong visible photoluminescence in a Ge/porous Si structure, APPL PHYS L, 74(6), 1999, pp. 827-829
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
74
Issue
6
Year of publication
1999
Pages
827 - 829
Database
ISI
SICI code
0003-6951(19990208)74:6<827:OTOOSV>2.0.ZU;2-K
Abstract
We have studied the origin of strong visible photoluminescence (PL) in a Ge /porous Si (PS) structure in terms of infrared spectroscopy and electron sp in resonance (ESR). Spectral analyses indicate that the enhanced PL cannot arise from both the quantum confinement on Ge nanocrystals embedded in the pores and the chemical compound of Ge, O, and H at the surface of the porou s Si formed during Ge deposition. The experimental result from ESR strongly suggests that optical transitions in the oxygen-related defect centers (no nbridging oxygen hole centers) at the interface between PS and the Ge layer are responsible for the enhanced PL. (C) 1999 American Institute of Physic s. [S0003-6951(99)00406-4].