Surface characterization of ordered (GaIn)P

Citation
I. Pietzonka et al., Surface characterization of ordered (GaIn)P, J CRYST GR, 195(1-4), 1998, pp. 21-27
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
0022-0248 → ACNP
Volume
195
Issue
1-4
Year of publication
1998
Pages
21 - 27
Database
ISI
SICI code
0022-0248(199812)195:1-4<21:SCOO(>2.0.ZU;2-1
Abstract
The knowledge of the nature of the sample surface is important to influence and optimize growth processes and to understand growth mechanisms. Here, a study of the surface of ordered (GaIn)P grown on differently misoriented ( 001)GaAs substrates is presented using high-resolution transmission electro n microscopy (HRTEM) and atomic force microscopy (AFM). Whereas the surface of GaAs consists of (001) terraces and bunched supersteps, vicinal regions appear additionally on the (GaIn)P surface. The height of supersteps incre ases with increasing misorientation angle and decreasing growth temperature . The surface morphology has also been investigated as a function of the ph osphorus partial pressure using three different precursors (phosphine, tert iarybutylphosphine, and ditertiarybutylphosphine) and of the zinc doping. M oreover, additional characteristic facets such as (10l), (01l), (h1l), and (1kl) were found. (C) 1998 Elsevier Science B.V. All rights reserved.