High-quality silicon/insulator heteroepitaxial structures formed by molecular beam epitaxy using Al2O3 and Si

Citation
Yc. Jung et al., High-quality silicon/insulator heteroepitaxial structures formed by molecular beam epitaxy using Al2O3 and Si, J CRYST GR, 196(1), 1999, pp. 88-96
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
0022-0248 → ACNP
Volume
196
Issue
1
Year of publication
1999
Pages
88 - 96
Database
ISI
SICI code
0022-0248(199901)196:1<88:HSHSFB>2.0.ZU;2-J
Abstract
Heteroepitaxial growth of gamma-Al2O3 films on a Si substrate and the growt h of Si films on the gamma-Al2O3/Si structures by molecular beam epitaxy ha ve been investigated. It has been found from AFM and RHEED observations tha t, gamma-Al2O3 films with an atomically smooth surface with an RMS values o f similar to 3 Angstrom and high crystalline quality can be grown on Si (1 1 1) substrates at substrate temperatures of 650-750 degrees C. Al2O3 films grown at higher temperatures above 800 degrees C, did not show good surfac e morphology due to etching of a Si surface by N2O gas in the initial growt h stage. It has also been found that it is possible to grow high-quality Si layers by the predeposition of Al layer followed by thermal treatment prio r to the Si molecular beam epitaxy. Cross-sectional TEM observations have s hown that the epitaxial Si had significantly improved crystalline quality a nd surface morphology when the Al predeposition layer thickness was 10 Angs trom and the thermal treatment temperature was 900 degrees C. The resulting improved crystalline quality of Si films grown on Al2O3 is believed to be due to the Al2O3 surface modification. (C) 1999 Elsevier Science B.V. All r ights reserved.