Relation between GaAs surface morphology and incorporation of hexagonal GaN into cubic GaN

Citation
H. Tachibana et al., Relation between GaAs surface morphology and incorporation of hexagonal GaN into cubic GaN, J CRYST GR, 196(1), 1999, pp. 41-46
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
0022-0248 → ACNP
Volume
196
Issue
1
Year of publication
1999
Pages
41 - 46
Database
ISI
SICI code
0022-0248(199901)196:1<41:RBGSMA>2.0.ZU;2-2
Abstract
Cubic GaN (c-GaN) layers were grown on GaAs(0 0 1) substrates by metalorgan ic vapor-phase epitaxy, using dimethylhydrazine as a nitrogen source. For t he investigated growth temperature region of 600-820 degrees C, only h-GaN whose c-axis is oriented in the [1 1 1]A or [(1) over bar (1) over bar 1]A direction was incorporated into c-GaN. This orientation anisotropy of h-GaN caused the anisotropy of the width of c-GaN(0 0 2) X-ray diffraction (XRD) peaks. By flattening the GaAs surface to the atomic level, the hexagonal c omposition was effectively reduced and the anisotropy in the width of XRD w as eliminated. The observed result was interpreted in terms of molecular st eps appearing on the GaAs surface. (C) 1999 Elsevier Science B.V. All right s reserved.