Metal organic vapour phase epitaxial growth and characterization of (GaIn)P layers grown with different P-containing precursors

Citation
I. Pietzonka et al., Metal organic vapour phase epitaxial growth and characterization of (GaIn)P layers grown with different P-containing precursors, J CRYST GR, 196(1), 1999, pp. 33-40
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
0022-0248 → ACNP
Volume
196
Issue
1
Year of publication
1999
Pages
33 - 40
Database
ISI
SICI code
0022-0248(199901)196:1<33:MOVPEG>2.0.ZU;2-R
Abstract
The suitability of ditertiarybutylphosphine (DitBuPH) for the low-pressure MOVPE growth of (GaIn)P has been investigated. This source is distinguished by a further reduction of the direct H-functions in the molecule, its liqu id state and its suitable vapour pressure and is therefore advantageous fro m the toxicity and safety viewpoint. The optical and structural properties are compared with those obtained using tertiarybutylphosphine (TBP) and PH3 . Moreover, doping experiments have been carried out using disilane and die thylzine as dopants. No difference in the growth and doping behaviour for a ll three used P-sources could be determined and the data are in good agreem ent with literature values. (C) 1999 Elsevier Science B.V. All rights reser ved.