Jp. Deville et al., An AES study of the influence of carbon on the chemical structure of some oxide films deposited by PECVD of organosilicon precursors, APPL SURF S, 137(1-4), 1999, pp. 136-141
AES is used to analyze carbon-containing Si oxide films produced by PECVD o
f a silicon-source gas, Like tetraethoxysilane or hexamethyldisiloxane, dil
uted with oxygen. Auger Si LW spectra reveal a large contribution typical o
f SiOx species with Si atoms surrounded by less than four O atoms. Besides,
the signature of Si-C bonds is detected. It is suggested that Si atoms bon
d simultaneously to O and C atoms, so that, the higher the carbon content i
s, the larger is the deviation from the dioxide stoichiometry. The dominant
Si species are somewhat dependent on the chemical structure of the precurs
or molecule. Auger C KW spectra indicate that C atoms enter C-Si and C-H bo
nds with no particular evidence of C-C bonds. (C) 1999 Elsevier Science B.V
. All rights reserved.