An AES study of the influence of carbon on the chemical structure of some oxide films deposited by PECVD of organosilicon precursors

Citation
Jp. Deville et al., An AES study of the influence of carbon on the chemical structure of some oxide films deposited by PECVD of organosilicon precursors, APPL SURF S, 137(1-4), 1999, pp. 136-141
Citations number
24
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
0169-4332 → ACNP
Volume
137
Issue
1-4
Year of publication
1999
Pages
136 - 141
Database
ISI
SICI code
0169-4332(199901)137:1-4<136:AASOTI>2.0.ZU;2-6
Abstract
AES is used to analyze carbon-containing Si oxide films produced by PECVD o f a silicon-source gas, Like tetraethoxysilane or hexamethyldisiloxane, dil uted with oxygen. Auger Si LW spectra reveal a large contribution typical o f SiOx species with Si atoms surrounded by less than four O atoms. Besides, the signature of Si-C bonds is detected. It is suggested that Si atoms bon d simultaneously to O and C atoms, so that, the higher the carbon content i s, the larger is the deviation from the dioxide stoichiometry. The dominant Si species are somewhat dependent on the chemical structure of the precurs or molecule. Auger C KW spectra indicate that C atoms enter C-Si and C-H bo nds with no particular evidence of C-C bonds. (C) 1999 Elsevier Science B.V . All rights reserved.