Real-time measurement of the evolution of carrier mobility in thin-film semiconductors during growth

Citation
R. Brenot et al., Real-time measurement of the evolution of carrier mobility in thin-film semiconductors during growth, APPL PHYS L, 74(1), 1999, pp. 58-60
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
74
Issue
1
Year of publication
1999
Pages
58 - 60
Database
ISI
SICI code
0003-6951(19990104)74:1<58:RMOTEO>2.0.ZU;2-1
Abstract
A method which allows real-time microwave mobility measurements in thin-fil m semiconductors is described. Carriers mobility is determined during growt h by combining two diagnostics: time-resolved microwave conductivity (TRMC) and spectroscopic ellipsometry (SE). TRMC provides the product of the numb er of free carriers, generated by a laser pulse, by their microwave mobilit y. The number of photogenerated carriers is calculated from real-time SE me asurements. Therefore, the mobility of excess carriers in the growing layer can be deduced from TRMC measurements. In order to illustrate this techniq ue, a TRMC setup has been implemented in situ together with real-time SE to analyze the growth of microcrystalline silicon (mu Si) by radio frequency glow discharge. An increase of the average carrier mobility as a function o f the film thickness is observed, which is compared with the increase of th e crystalline fraction evidenced by SE. (C) 1999 American Institute of Phys ics. [S0003-6951(99)01501-6].