Nv. Edwards et al., VARIATION OF GAN VALENCE BANDS WITH BIAXIAL STRESS AND QUANTIFICATIONOF RESIDUAL-STRESS, Applied physics letters, 70(15), 1997, pp. 2001-2003
Low-temperature reflectance data on epitaxial GaN thin-him samples cov
ering the widest range of tensile and compressive stress (-3.8-3.5 kba
r) thus far explicitly show the nonlinear behavior of the B-A and C-A
splittings versus the energy of the A exciton. Lineshape ambiguities t
hat hindered previous interpretations have been resolved with reciproc
al-space analysis, allowing us to obtain band parameters such as Delta
(SO) = 17.0 +/- 1 meV with increased confidence. (C) 1997 American Ins
titute of Physics.