VARIATION OF GAN VALENCE BANDS WITH BIAXIAL STRESS AND QUANTIFICATIONOF RESIDUAL-STRESS

Citation
Nv. Edwards et al., VARIATION OF GAN VALENCE BANDS WITH BIAXIAL STRESS AND QUANTIFICATIONOF RESIDUAL-STRESS, Applied physics letters, 70(15), 1997, pp. 2001-2003
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
0003-6951
Volume
70
Issue
15
Year of publication
1997
Pages
2001 - 2003
Database
ISI
SICI code
0003-6951(1997)70:15<2001:VOGVBW>2.0.ZU;2-Y
Abstract
Low-temperature reflectance data on epitaxial GaN thin-him samples cov ering the widest range of tensile and compressive stress (-3.8-3.5 kba r) thus far explicitly show the nonlinear behavior of the B-A and C-A splittings versus the energy of the A exciton. Lineshape ambiguities t hat hindered previous interpretations have been resolved with reciproc al-space analysis, allowing us to obtain band parameters such as Delta (SO) = 17.0 +/- 1 meV with increased confidence. (C) 1997 American Ins titute of Physics.