IMPACT IONIZATION AND LIGHT-EMISSION IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

Citation
A. Neviani et al., IMPACT IONIZATION AND LIGHT-EMISSION IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, Journal of applied physics, 74(6), 1993, pp. 4213-4220
Citations number
25
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
0021-8979
Volume
74
Issue
6
Year of publication
1993
Pages
4213 - 4220
Database
ISI
SICI code
0021-8979(1993)74:6<4213:IIALIG>2.0.ZU;2-A
Abstract
A study of light emission from GaAs metal-semiconductor field effect t ransistors and its connection with impact ionization phenomena is pres ented. First, the electrical behavior of the device in the preavalanch e regime is characterized by measuring the excess gate current. Numeri cal simulations are performed, showing that the excess gate current is due to the collection of impact-ionization-generated holes at the gat e electrode. Then, the energy distribution of the emitted photons in t he range 1.5-3.1 eV is analyzed. The integrated intensity of photons e mitted with energy above 1.5 eV is shown to be proportional, for large negative gate biases, to the product of gate and drain currents, sugg esting direct recombination of channel hot electrons with impact-ioniz ation-generated holes as the dominant emission mechanism. The deviatio n from simple proportionality at gate voltages around 0 V indicates th at in implanted devices in open channel conditions other mechanisms, s uch as bremsstrahlung, may significantly contribute to the intensity o f the emitted light.