ESTIMATION OF INDIUM-TO-GERMANIUM AND GALLIUM-TO-GERMANIUM SPUTTERINGYIELD RATIOS USING COSPUTTERING DEPOSITION

Citation
D. Comedi et al., ESTIMATION OF INDIUM-TO-GERMANIUM AND GALLIUM-TO-GERMANIUM SPUTTERINGYIELD RATIOS USING COSPUTTERING DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(6), 1994, pp. 3149-3151
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
0734-2101
Volume
12
Issue
6
Year of publication
1994
Pages
3149 - 3151
Database
ISI
SICI code
0734-2101(1994)12:6<3149:EOIAGS>2.0.ZU;2-Z
Abstract
The relative concentration of In and Ga atoms incorporated to hydrogen ated amorphous germanium (a-Ge:H) films by the cosputtering of solid I n and Ga sources together with a crystalline Ge target in a Ii-contain ing Ar plasma has been measured by means of Rutherford backscattering spectrometry and particle-induced x-ray emission. Both the experimenta l In-to-Ge and Ga-to-Ge relative concentrations were found to linearly scale with the respective In/Ge and Ga/Ge sputtered area ratios. From the slopes of these linear dependencies, In-to-Ge and Ga-to-Ge sputte ring yield ratios were estimated. The results were found to be consist ent with published theoretical sputtering yield values, but to disagre e with experimental sputtering yield results previously reported for t he case of the In-to-Ge yield ratio. For the case of Ga, a sputtering yield value of 1.6 atoms/ion was deduced from the present results, whi ch gives first experimental account of Ga sputtering by Ar ions.