DIAGNOSTICS AND CONTROL OF RADIOFREQUENCY GLOW-DISCHARGE

Citation
N. Mutsukura et al., DIAGNOSTICS AND CONTROL OF RADIOFREQUENCY GLOW-DISCHARGE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(6), 1994, pp. 3126-3130
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
0734-2101
Volume
12
Issue
6
Year of publication
1994
Pages
3126 - 3130
Database
ISI
SICI code
0734-2101(1994)12:6<3126:DACORG>2.0.ZU;2-2
Abstract
The diagnostics of 13.56 MHz planar radio-frequency (rf) plasma were c arried out using spatially resolved optical emission spectroscopy betw een the parallel electrodes. Plasma sheath thickness d evaluated from the optical emission profiles depends on gas pressure P, and a relatio nship of P(n)d=const. was obtained for CH4, CF4, and O-2 plasmas with n greater than or equal to 1/3, and for He and Ar plasmas with n great er than or equal to 1/2. The etching rate and the etching profile of s ilicon in CF4 plasma were also examined as a function of gas pressure. A novel technique for controlling rf plasmas using the optical sheath thickness and maximum optical emission intensity is presented. This t echnique was applied to dry etching of silicon in CF4 plasma. When thi s novel control technique was used, the deviation in the etched depth for a constant etching time became smaller than that obtained using co nventional power control methods.