DAMAGE AND CONTAMINATION IN LOW-TEMPERATURE ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING

Citation
Kw. Whang et al., DAMAGE AND CONTAMINATION IN LOW-TEMPERATURE ELECTRON-CYCLOTRON-RESONANCE PLASMA-ETCHING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(6), 1994, pp. 3091-3094
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
0734-2101
Volume
12
Issue
6
Year of publication
1994
Pages
3091 - 3094
Database
ISI
SICI code
0734-2101(1994)12:6<3091:DACILE>2.0.ZU;2-H
Abstract
An electron cyclotron resonance (ECR) plasma etching system has been b uilt to study the damage and contamination inherent to the high densit y ECR etching. The temperature of the substrate can be lowered to -150 degrees C by the backside cooling of the substrate with the liquid-ni trogen cooled helium. The substrate temperature during etching was mon itored by a sheathed thermocouple and IR laser interference thermometr y. Gate polysilicon etching by SF6 plasma had been carried out and the effect of the substrate temperature on the anisotropy, selectivity, a nd etch rate was examined with special emphasis on the damage and cont amination incurred by the plasma etching. Secondary ion mass spectrosc opy (SIMS) analysis shows that the depth of the contaminated layer dec reases when the substrate temperature is lowered to -120 degrees C. Al so, the measurement of the gate oxide breakdown voltage shows much les s oxide damage when the substrate temperature is lowered during ECR et ching.