DEPTH PROFILING ANALYSIS OF ALUMINUM OXIDATION DURING FILM DEPOSITIONIN A CONVENTIONAL HIGH-VACUUM SYSTEM

Citation
J. Kim et al., DEPTH PROFILING ANALYSIS OF ALUMINUM OXIDATION DURING FILM DEPOSITIONIN A CONVENTIONAL HIGH-VACUUM SYSTEM, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(6), 1994, pp. 3062-3067
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
0734-2101
Volume
12
Issue
6
Year of publication
1994
Pages
3062 - 3067
Database
ISI
SICI code
0734-2101(1994)12:6<3062:DPAOAO>2.0.ZU;2-J
Abstract
The oxidation of aluminum thin films deposited in a conventional high vacuum chamber has been investigated using x-ray photoelectron spectro scopy (XPS) and depth profiling. The state of the Al layer was preserv ed by coating it with a protective MgF2 layer in the deposition chambe r. Oxygen concentrations in the film layers were determined as a funct ion of sputter time (depth into the film). The results show that an ox idized layer is formed at the start of Al deposition and that a less e xtensively oxidized Al layer is deposited if the deposition rate is fa st. The top surface of the Al layer oxidizes very quickly. This top ox idized layer may be thicker than has been previously reported by optic al methods. Maximum oxygen concentrations measured by XPS at each Al i nterface are related to pressure to rate ratios determined during the Al layer deposition.