GA-CH3 BOND SCISSION BY ATOMIC-H - THE DEPLETION OF SURFACE CARBON FROM A GALLIUM ALKYL FILM ON SILICON DIOXIDE

Citation
Sr. Lucas et al., GA-CH3 BOND SCISSION BY ATOMIC-H - THE DEPLETION OF SURFACE CARBON FROM A GALLIUM ALKYL FILM ON SILICON DIOXIDE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(6), 1994, pp. 3040-3047
Citations number
37
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
0734-2101
Volume
12
Issue
6
Year of publication
1994
Pages
3040 - 3047
Database
ISI
SICI code
0734-2101(1994)12:6<3040:GBSBA->2.0.ZU;2-E
Abstract
It is shown that atomic hydrogen is an effective reagent for the extra ction of CH3 groups from an adsorbed monolayer produced from trimethyl gallium adsorption on SiO2. The reaction is first order in CH3 surface concentration and proceeds with zero activation energy in the 100 K t emperature region. The efficiency for the extraction process is about 10(-2) per atomic H collision with the surface. These results show tha t the Ga-CH3 bond may be broken by insertion of hydrogen atoms and tha t either CH3 or CH4 is eliminated by the process. The results indicate that atomic hydrogen is an effective agent for removal of carbon (pre sent as CH3) during III-V film growth processes. The extraction of CH3 by atomic H occurs on the surface, but in metalorganic chemical vapor deposition processes a similar reaction with metal alkyl species may also occur in the gas phase. Excellent agreement with the theoretical calculations of Hiraoka and Mashita for the interaction of atomic H wi th AlH2(CH3) molecules is found.