CRSI2 SI(III) - GROWTH OF MONOTYPE DOMAINS BY SOLID-PHASE EPITAXY ON A VICINAL SURFACE/

Citation
A. Rocher et al., CRSI2 SI(III) - GROWTH OF MONOTYPE DOMAINS BY SOLID-PHASE EPITAXY ON A VICINAL SURFACE/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(6), 1994, pp. 3018-3022
Citations number
19
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
0734-2101
Volume
12
Issue
6
Year of publication
1994
Pages
3018 - 3022
Database
ISI
SICI code
0734-2101(1994)12:6<3018:CS-GOM>2.0.ZU;2-A
Abstract
CrSi2 layers grown by solid phase epitaxy on a nominal (111) Si surfac e exhibit in the same proportion two different orientation relationshi ps, named A and B. When CrSi2 is deposited on a 8 degrees vicinal (111 ) Si surface, B-type orientation is favored with respect to the A type . This result can be explained by the fact that both the step width in troduced by the miscut and the planar coincidence between {1100}(CrSi2 ) and {112}(Si) are nearly equal to 23 Angstrom. 60 degrees misfit dis locations are observed at the interface with the same spacing. Their B urgers vector component along [111] can be almost exactly compensated by steps along the [110] directions, which make possible a coherent gr owth of the B-type orientation.