IN-SITU OBSERVATIONS OF GE(001) AND GE SI(001) USING LOW-ENERGY ION-SCATTERING/

Citation
Wt. Taferner et al., IN-SITU OBSERVATIONS OF GE(001) AND GE SI(001) USING LOW-ENERGY ION-SCATTERING/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(6), 1994, pp. 3012-3017
Citations number
22
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
0734-2101
Volume
12
Issue
6
Year of publication
1994
Pages
3012 - 3017
Database
ISI
SICI code
0734-2101(1994)12:6<3012:IOOGAG>2.0.ZU;2-T
Abstract
Low-energy ion scattering (LEIS) angular distributions were measured o n Ge(001)-1X1-O and Ge(001)-2X1+1x2 surfaces. The intensity of 105 deg rees backscattered ions and neutrals from 3 keV Ar+ primary ions incid ent at 45 degrees were recorded as a function of the surface azimuthal angle. The major symmetry directions of the Ge surface were Observed. A 14.2 keV Na+ pulsed beam incident at 72.5 degrees with direct recoi led atoms detected by time of flight (TOF) at an angle of 25 degrees w as used to determine the levels of elemental contaminants' oil the Ge( 001) surface at different stages of annealing. TOF-LEIS of backscatter ed 3 keV Ne+ was used to monitor, in ''real time,'' Ge deposition on S i(001) at room temperature.