MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS

Citation
C. Canali et al., MEASUREMENT OF THE ELECTRON IONIZATION COEFFICIENT AT LOW ELECTRIC-FIELDS IN GAAS-BASED HETEROJUNCTION BIPOLAR-TRANSISTORS, IEEE electron device letters, 15(9), 1994, pp. 354-356
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
0741-3106
Volume
15
Issue
9
Year of publication
1994
Pages
354 - 356
Database
ISI
SICI code
0741-3106(1994)15:9<354:MOTEIC>2.0.ZU;2-A
Abstract
Values of the electron ionization coefficient an in (100) GaAs extendi ng the previously available data by two orders of magnitude, down to 1 cm-1, are presented. The data are directly extracted from the multipl ication factor, M-1, measured in lightly doped collector n-p-n AlGaAs/ GaAs Heterojunction Bipolar Transistors (HBT's). It is shown that the sensitivity of the technique is limited by the Early effect, whose inf luence can be reduced by driving the device at constant emitter-base b ias and by using heavily doped base regions. HBT's can provide simulta neously high base doping and current gain, and represent therefore an excellent tool for these measurements.