RESONANT RAMAN-SCATTERING IN A ZERO-GAP SEMICONDUCTOR - INTERFERENCE EFFECTS AND DEFORMATION POTENTIALS AT THE E(1) AND E(1)+DELTA(1) GAPS OF HGTE

Citation
M. Rosch et al., RESONANT RAMAN-SCATTERING IN A ZERO-GAP SEMICONDUCTOR - INTERFERENCE EFFECTS AND DEFORMATION POTENTIALS AT THE E(1) AND E(1)+DELTA(1) GAPS OF HGTE, Physical review. B, Condensed matter, 49(19), 1994, pp. 13460-13474
Citations number
65
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
0163-1829
Volume
49
Issue
19
Year of publication
1994
Pages
13460 - 13474
Database
ISI
SICI code
0163-1829(1994)49:19<13460:RRIAZS>2.0.ZU;2-3
Abstract
The efficiency of resonant Raman scattering by TO and LO phonons in mo lecular-beam epitaxially grown HgTe is studied for (001), (110), and ( 111) surfaces with incident photon energies near the E1 and E1 + DELTA 1 band gaps. Absolute values of the Raman scattering efficiency are ob tained by means of a sample substitution method and by correcting the experimental data with respect to absorption and reflection losses of the incident and the scattered radiation as well as the different angl es of collection inside and outside the sample. We compare our results with calculated resonance profiles assuming uncorrelated electron-hol e pairs as intermediate states. Interference effects between dipole-al lowed (deformation-potential and electro-optic coupling) and dipole-fo rbidden scattering by LO phonons in HgTe (001) are used to separate ex trinsic (electron-impurity interaction) from intrinsic contributions ( Frohlich intraband coupling) to dipole-forbidden scattering. The optic al deformation potentials near the E1 and E1+DELTA1 gaps are obtained from TO scattering in HgTe (111) [HgTe (110)] to be d1,o5 = -19.9 eV ( -21.9 eV) and d3,o5 = 14.7 eV (13.0 eV). The Faust-Henry coefficient o f HgTe is determined.