METASTABLE ELECTRICAL-ACTIVITY OF MISFIT-DISLOCATION-ASSOCIATED DEFECTS IN SI SI(GE) HETEROEPITAXIAL STRUCTURES - EBIC DLTS CORRELATION/

Citation
A. Agarwal et al., METASTABLE ELECTRICAL-ACTIVITY OF MISFIT-DISLOCATION-ASSOCIATED DEFECTS IN SI SI(GE) HETEROEPITAXIAL STRUCTURES - EBIC DLTS CORRELATION/, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 43-47
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
24
Issue
1-3
Year of publication
1994
Pages
43 - 47
Database
ISI
SICI code
0921-5107(1994)24:1-3<43:MEOMD>2.0.ZU;2-I
Abstract
Thermally induced metastable electrical activity with buried heteroepi taxial layers in Si/Si(Ge) has been investigated using deep-level tran sient spectroscopy (DLTS) and temperature-dependent electron-beam-indu ced current and preferential chemical etching. Examination of diodes l ocated on regions with different misfit dislocation densities on the s ame wafer indicate that the concentration of the metastable electronic defects decreases with increasing dislocation density. Depth-dependen t DLTS reveals two metastable deep level traps, one of which is associ ated with unrelaxed interfacial strain. A discussion of the possible p hysical sources of these two defect levels is presented.