CHARACTERIZATION OF LATERAL SEMICONDUCTOR NANOSTRUCTURES BY MEANS OF X-RAY GRAZING-INCIDENCE DIFFRACTION

Citation
K. Paschke et al., CHARACTERIZATION OF LATERAL SEMICONDUCTOR NANOSTRUCTURES BY MEANS OF X-RAY GRAZING-INCIDENCE DIFFRACTION, Applied physics letters, 70(8), 1997, pp. 1031-1033
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
0003-6951
Volume
70
Issue
8
Year of publication
1997
Pages
1031 - 1033
Database
ISI
SICI code
0003-6951(1997)70:8<1031:COLSNB>2.0.ZU;2-H
Abstract
Free-standing wire arrays prepared by holographic exposure and wet che mical deep etching on a vertically arranged GaAs/GaInAs/GaAs[001] sing le quantum well structure were characterized by x-ray grazing incidenc e diffraction using synchrotron radiation. Using a grazing angle of al pha(i) approximate to 0.05 degrees the diffracted intensity stems prim arily from the surface grating. It's periodicity (D approximate to 480 nm) was determined close to the (-220) and (220) Bragg reflection bei ng parallel and perpendicular to the orientation of wires, respectivel y. The average wire width [(21.6 +/- 1.5) nm and (96.6 +/- 1.5) nm, re spectively] and the coherence length of the grating (xi approximate to 2 mu m) were obtained via Fourier transformation of the (220) shape f unction. (C) 1997 American Institute of Physics.