PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY OF AL0.48IN0.52AS SEMIINSULATING LAYERS GROWN ON INP BY MOLECULAR-BEAM EPITAXY

Citation
A. Kalboussi et al., PHOTOINDUCED CURRENT TRANSIENT SPECTROSCOPY OF AL0.48IN0.52AS SEMIINSULATING LAYERS GROWN ON INP BY MOLECULAR-BEAM EPITAXY, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 93-96
Citations number
19
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
22
Issue
1
Year of publication
1993
Pages
93 - 96
Database
ISI
SICI code
0921-5107(1993)22:1<93:PCTSOA>2.0.ZU;2-3
Abstract
Deep levels in undoped semi-insulating In0.52Al0.48As layers grown by molecular beam epitaxy on iron-doped InP have been studied by photolum inescence and photo-induced current transient spectroscopy. The effect of the growth temperature T-g in the range from 300 degrees C to 530 degrees C has been investigated. The results show that low T-g causes the material quality to deteriorate and leads to formation of a higher concentration of deep traps. It is shown that optimized material qual ity can be obtained for InAlAs layers on InP substrates with T-g aroun d 530 degrees C with sufficiently high resistivity, reduced trap densi ty and good structural properties which is appropriate for fabrication of high electron mobility transistors.