PHOTOCONDUCTANCE MINORITY-CARRIER LIFETIME VS SURFACE PHOTOVOLTAGE DIFFUSION LENGTH IN SILICON

Citation
A. Buczkowski et al., PHOTOCONDUCTANCE MINORITY-CARRIER LIFETIME VS SURFACE PHOTOVOLTAGE DIFFUSION LENGTH IN SILICON, Journal of the Electrochemical Society, 140(11), 1993, pp. 3240-3245
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Electrochemistry
ISSN journal
0013-4651
Volume
140
Issue
11
Year of publication
1993
Pages
3240 - 3245
Database
ISI
SICI code
0013-4651(1993)140:11<3240:PMLVSP>2.0.ZU;2-9
Abstract
Recombination lifetime and diffusion length measured with the photocon ductance decay and surface photovoltage techniques are compared theore tically and experimentally, and reasons for possible discrepancies are discussed. Specific examples are given which show that, if full advan tage of these noncontact and nondestructive procedures is to be taken, it is necessary that surface recombination be considered in the analy sis of any experimental data. This is particularly true for samples wh ere the diffusion length is greater than one-fourth of the wafer thick ness, a condition for which it is essential that theoretical algorithm s for separating the bulk and surface components of recombination be d eveloped.