Hs. Kim et al., BREAKDOWN VOLTAGE ENHANCEMENT OF THE P-N-JUNCTION BY SELF-ALIGNED DOUBLE DIFFUSION PROCESS THROUGH A TAPERED SIO2 IMPLANT MASK, IEEE electron device letters, 16(9), 1995, pp. 405-407
The low doping region extension at the edge of the junction curvature
is implemented with the self-aligned double diffusion process using a
tapered SiO2 implant mask, The p(+)-p-n diodes fabricated with the pro
posed double diffusion process have relaxed the surface electric field
at the junction curvature and increased the breakdown voltage by 140
V, compared with the cylindrical p-n junction, It is also found that t
he breakdown voltage of the p(+)-p-n diodes having the field plate (FP
) over the tapered oxide is 500 V, while that of the conventional p-n
junction with the FP is 280 V.