BREAKDOWN VOLTAGE ENHANCEMENT OF THE P-N-JUNCTION BY SELF-ALIGNED DOUBLE DIFFUSION PROCESS THROUGH A TAPERED SIO2 IMPLANT MASK

Citation
Hs. Kim et al., BREAKDOWN VOLTAGE ENHANCEMENT OF THE P-N-JUNCTION BY SELF-ALIGNED DOUBLE DIFFUSION PROCESS THROUGH A TAPERED SIO2 IMPLANT MASK, IEEE electron device letters, 16(9), 1995, pp. 405-407
Citations number
6
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
0741-3106
Volume
16
Issue
9
Year of publication
1995
Pages
405 - 407
Database
ISI
SICI code
0741-3106(1995)16:9<405:BVEOTP>2.0.ZU;2-I
Abstract
The low doping region extension at the edge of the junction curvature is implemented with the self-aligned double diffusion process using a tapered SiO2 implant mask, The p(+)-p-n diodes fabricated with the pro posed double diffusion process have relaxed the surface electric field at the junction curvature and increased the breakdown voltage by 140 V, compared with the cylindrical p-n junction, It is also found that t he breakdown voltage of the p(+)-p-n diodes having the field plate (FP ) over the tapered oxide is 500 V, while that of the conventional p-n junction with the FP is 280 V.