ELECTRICAL-CONDUCTIVITY OF METAL DIAMOND-LIKE CARBON/SI SYSTEM/

Citation
M. Dluzniewski et al., ELECTRICAL-CONDUCTIVITY OF METAL DIAMOND-LIKE CARBON/SI SYSTEM/, Advanced materials for optics and electronics, 6(5-6), 1996, pp. 409-411
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science",Optics,"Engineering, Eletrical & Electronic",Chemistry
ISSN journal
1057-9257
Volume
6
Issue
5-6
Year of publication
1996
Pages
409 - 411
Database
ISI
SICI code
1057-9257(1996)6:5-6<409:EOMDCS>2.0.ZU;2-J
Abstract
Interest in diamond-like carbon (DLC) thin films has increased conside rably in the last few years, It is suggested that DLC films may be use d for electronic devices, especially working at high temperatures, The subject of this contribution is the electrical conduction of a metal/ DLC/Si system, The investigated DLC films were prepared by two methods : radio-frequency plasma chemical vapour deposition (RF-PCVD) and puls ed cathodic-arc discharge (PCAD) on silicon rectifying character of th e current-voltage behaviour may be caused by a thin interfacial SiO2 s ublayer existing between the DLC film and silicon.