ANOMALOUS TEMPERATURE-DEPENDENCE OF PL CHARACTERISTICS IN ORDERED INGAASP STRAINED-LAYER MULTIQUANTUM-WELL STRUCTURE

Citation
N. Otsuka et al., ANOMALOUS TEMPERATURE-DEPENDENCE OF PL CHARACTERISTICS IN ORDERED INGAASP STRAINED-LAYER MULTIQUANTUM-WELL STRUCTURE, Journal of crystal growth, 170(1-4), 1997, pp. 626-633
Citations number
25
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Crystallography
Journal title
ISSN journal
0022-0248
Volume
170
Issue
1-4
Year of publication
1997
Pages
626 - 633
Database
ISI
SICI code
0022-0248(1997)170:1-4<626:ATOPCI>2.0.ZU;2-8
Abstract
Clarification of anomalous photoluminescence (PL) characteristics for InGaAsP compressively strained layer multi-quantum well (SL-MQW) struc tures is studied to realize highly strained SL-MQW lasers with a large number of well layers. PL characteristics such as an increase in PL l inewidth and a small temperature dependence of the PL peak. wavelength are observed in the SL-MQW structures in which a structure of CuPt-ty pe atomic ordering is observed, Elimination of the ordered structure a s well as reduction of the PL linewidth have been confirmed with incre asing growth temperature. Although formation of an interfacial undulat ion (lateral modulation) between SL-MQW layers is also suppressed by t he increase in growth temperature, the formation has ultimately limite d the maximum strain in SL-MQW, We suggest that the anomalous PL chara cteristics result from generation of ordering, dominant when the growt h temperature is lower, as well as from interfacial undulation, domina nt in highly strained SL-MQW when the growth temperature is increased.