N. Otsuka et al., ANOMALOUS TEMPERATURE-DEPENDENCE OF PL CHARACTERISTICS IN ORDERED INGAASP STRAINED-LAYER MULTIQUANTUM-WELL STRUCTURE, Journal of crystal growth, 170(1-4), 1997, pp. 626-633
Clarification of anomalous photoluminescence (PL) characteristics for
InGaAsP compressively strained layer multi-quantum well (SL-MQW) struc
tures is studied to realize highly strained SL-MQW lasers with a large
number of well layers. PL characteristics such as an increase in PL l
inewidth and a small temperature dependence of the PL peak. wavelength
are observed in the SL-MQW structures in which a structure of CuPt-ty
pe atomic ordering is observed, Elimination of the ordered structure a
s well as reduction of the PL linewidth have been confirmed with incre
asing growth temperature. Although formation of an interfacial undulat
ion (lateral modulation) between SL-MQW layers is also suppressed by t
he increase in growth temperature, the formation has ultimately limite
d the maximum strain in SL-MQW, We suggest that the anomalous PL chara
cteristics result from generation of ordering, dominant when the growt
h temperature is lower, as well as from interfacial undulation, domina
nt in highly strained SL-MQW when the growth temperature is increased.