THERMAL-STRESSES AND DISLOCATION FORMATION IN LIQUID-ENCAPSULATED CZOCHRALSKI-GROWN INP CRYSTALS

Citation
S. Fogliani et al., THERMAL-STRESSES AND DISLOCATION FORMATION IN LIQUID-ENCAPSULATED CZOCHRALSKI-GROWN INP CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 76-79
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
28
Issue
1-3
Year of publication
1994
Pages
76 - 79
Database
ISI
SICI code
0921-5107(1994)28:1-3<76:TADFIL>2.0.ZU;2-9
Abstract
An analysis of InP liquid-encapsulated Czochralski growth, based on a comparison of experimental and calculated dislocation density data, is presented. The adopted model is based on the calculation of the therm oelastic stress field, being the temperature field calculated through the thermal capillary model. Both Smith's rule and the Alexander-Haase n approach have been adopted to correlate the stress field with the di slocation density. Undoped and S-doped materials have been considered.