S. Fogliani et al., THERMAL-STRESSES AND DISLOCATION FORMATION IN LIQUID-ENCAPSULATED CZOCHRALSKI-GROWN INP CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 76-79
An analysis of InP liquid-encapsulated Czochralski growth, based on a
comparison of experimental and calculated dislocation density data, is
presented. The adopted model is based on the calculation of the therm
oelastic stress field, being the temperature field calculated through
the thermal capillary model. Both Smith's rule and the Alexander-Haase
n approach have been adopted to correlate the stress field with the di
slocation density. Undoped and S-doped materials have been considered.