CHEMICAL BONDING AND ELECTRONIC-PROPERTIES OF SE-RICH ZNSE-GAAS(001) INTERFACES

Citation
G. Bratina et al., CHEMICAL BONDING AND ELECTRONIC-PROPERTIES OF SE-RICH ZNSE-GAAS(001) INTERFACES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3135-3143
Citations number
44
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
0734-2101
Volume
14
Issue
6
Year of publication
1996
Pages
3135 - 3143
Database
ISI
SICI code
0734-2101(1996)14:6<3135:CBAEOS>2.0.ZU;2-Q
Abstract
We report synchrotron radiation, soft-x-ray photoemission spectroscopy studies of ZnSe-GaAs heterojunctions fabricated by molecular beam epi taxy in situ on GaAs(001)2X4 substrates, Measurements of the band offs ets confirm that interfaces grown in Se-rich conditions exhibit relati vely low valence band offsets (as low as 0.5 eV), while interfaces gro wn in Zn-rich conditions show relatively high valence band offsets (as high as 1.3 eV). In the Se-rich case, the improved surface sensitivit y of the technique revealed previously unreported contributions to the As 3d and Ga 3d core lineshapes, with substantial (0.8-2 eV) chemical shifts. The shifts, as well as the coverage and escape-depth dependen ce of the results suggest enhanced atomic intermixing across Se-rich i nterfaces, with the formation of both Se-As and Se-Ga chemical bonds. (C) 1996 American Vacuum Society.