G. Bratina et al., CHEMICAL BONDING AND ELECTRONIC-PROPERTIES OF SE-RICH ZNSE-GAAS(001) INTERFACES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3135-3143
Citations number
44
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
We report synchrotron radiation, soft-x-ray photoemission spectroscopy
studies of ZnSe-GaAs heterojunctions fabricated by molecular beam epi
taxy in situ on GaAs(001)2X4 substrates, Measurements of the band offs
ets confirm that interfaces grown in Se-rich conditions exhibit relati
vely low valence band offsets (as low as 0.5 eV), while interfaces gro
wn in Zn-rich conditions show relatively high valence band offsets (as
high as 1.3 eV). In the Se-rich case, the improved surface sensitivit
y of the technique revealed previously unreported contributions to the
As 3d and Ga 3d core lineshapes, with substantial (0.8-2 eV) chemical
shifts. The shifts, as well as the coverage and escape-depth dependen
ce of the results suggest enhanced atomic intermixing across Se-rich i
nterfaces, with the formation of both Se-As and Se-Ga chemical bonds.
(C) 1996 American Vacuum Society.