S. Habermehl et G. Lucovsky, ION-SURFACE INTERACTIONS IN LOW-TEMPERATURE SILICON EPITAXY BY REMOTEPLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3024-3032
Citations number
37
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Epitaxial Si thin films have been deposited by remote plasma enhanced
chemical-vapor deposition at temperatures below 450 degrees C and at p
ressures between 50 and 500 mTorr. Growth rate data reveal the presenc
e of two pressure dependent regimes for deposition process activation.
Sampling of the plasma afterglow by mass spectrometry indicates a cor
relation between enhanced rates for single crystal film formation and
the onset of an ion-induced surface H abstraction processes below pres
sures of similar to 200 mTorr. The role of low energy ions in the abst
raction of chemisorbed H and its effects on the growth kinetics are di
scussed. (C) 1996 American Vacuum Society.