ION-SURFACE INTERACTIONS IN LOW-TEMPERATURE SILICON EPITAXY BY REMOTEPLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

Citation
S. Habermehl et G. Lucovsky, ION-SURFACE INTERACTIONS IN LOW-TEMPERATURE SILICON EPITAXY BY REMOTEPLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(6), 1996, pp. 3024-3032
Citations number
37
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
0734-2101
Volume
14
Issue
6
Year of publication
1996
Pages
3024 - 3032
Database
ISI
SICI code
0734-2101(1996)14:6<3024:IIILSE>2.0.ZU;2-D
Abstract
Epitaxial Si thin films have been deposited by remote plasma enhanced chemical-vapor deposition at temperatures below 450 degrees C and at p ressures between 50 and 500 mTorr. Growth rate data reveal the presenc e of two pressure dependent regimes for deposition process activation. Sampling of the plasma afterglow by mass spectrometry indicates a cor relation between enhanced rates for single crystal film formation and the onset of an ion-induced surface H abstraction processes below pres sures of similar to 200 mTorr. The role of low energy ions in the abst raction of chemisorbed H and its effects on the growth kinetics are di scussed. (C) 1996 American Vacuum Society.